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| Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SD2177 I Features * Low collector to emitter saturation voltage VCE(sat) * Allowing supply with the radial taping 6.90.1 1.05 2.50.1 0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45-0.05 +0.1 1 2 3 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg -50 -50 -5 -3 -2 1 150 -55 to +150 V V V A A W C C 1.20.1 0.65 max. 0.45+ 0.1 - 0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.50.1 Parameter Symbol Rating Unit 0.45-0.05 I Absolute Maximum Ratings Ta = 25C +0.1 2.50.5 2.50.5 (HW Type) I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 *2 Conditions VCB = -20 V, IE = 0 IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCE = -2 V, IC = -200 mA VCE = -2 V, IC = -1 A IC = -1 A, IB = -50 mA IC = -1 A, IB = -50 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -50 -50 -5 120 60 Typ Max - 0.1 14.50.5 0.5 4.50.1 Unit A V V V 340 - 0.2 - 0.85 110 40 60 - 0.3 -1.2 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 R 120 to 240 VCE(sat) VBE(sat) fT Cob V V MHz pF S 170 to 340 No-rank 120 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1434 PC Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. -2.4 Transistors IC VCE Collector to emitter saturation voltage VCE(sat) (V) Ta = 25C VCE(sat) IC -10 -3 -1 IC / IB = 20 Collector power dissipation PC (W) 1.0 -2.0 Collector current IC (A) 0.8 -1.6 - 0.3 - 0.1 Ta = 100C 25C -25C 0.6 -1.2 IB = -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA 0 -2 -4 -6 -8 -10 0.4 - 0.8 - 0.03 - 0.01 0.2 - 0.4 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC Base to emitter saturation voltage VBE(sat) (V) -100 -30 IC / IB = 20 500 hFE IC VCE = -2 V 200 fT IE VCB = -10 V Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 -10 -3 25C -1 Ta = -25C 75C 400 160 300 Ta = 100C 200 25C -25C 100 120 - 0.3 - 0.1 80 40 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob VCB 240 Collector output capacitance Cob (pF) 200 IE = 0 f = 1 MHz Ta = 25C 160 120 80 40 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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